Littelfuse, Inc. Datasheets for Metal-Oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more

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Product Name Notes
IXFA130N15X3
IXFA26N30X3
IXFA30N25X3
IXFA36N20X3
IXFA38N30X3
IXFA44N25X3
IXFA50N20X3
IXFA56N30X3
IXFA60N25X3
IXFA72N20X3
IXFA72N30X3
IXFA80N25X3
IXFA90N20X3
IXFH100N30X3
IXFH120N25X3
IXFH120N30X3
IXFH130N15X3
IXFH140N20X3
IXFH150N25X3
IXFH150N30X3
IXFH170N15X3
IXFH170N25X3
IXFH180N20X3
IXFH220N20X3
IXFH240N15X3
IXFH56N30X3
IXFH72N30X3
IXFH80N25X3
IXFH90N20X3
IXFJ80N25X3
IXFK150N30X3
IXFK170N25X3
IXFK210N30X3
IXFK220N20X3
IXFK240N25X3
IXFK300N20X3
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and...
IXFA12N65X2
IXFA18N65X2
IXFA22N65X2
IXFA34N65X2
IXFA8N65X2
IXFB150N65X2
IXFH12N65X2
IXFH18N65X2
IXFH22N65X2
IXFH34N65X2
IXFH46N65X2
IXFH60N65X2
IXFH60N65X2-4
IXFH80N65X2
IXFH80N65X2-4
IXFK100N65X2
IXFK120N65X2
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability...
IXFA10N60P
IXFA10N80P
IXFA12N50P
IXFA14N60P
IXFA16N50P
IXFA4N100P
IXFA5N100P
IXFA6N120P
IXFA7N100P
IXFA7N80P
IXFB100N50P
IXFB170N30P
IXFB210N20P
IXFB300N10P
IXFB30N120P
IXFB40N110P
IXFB44N100P
IXFB52N90P
IXFB60N80P
IXFB82N60P
IXFH100N25P
IXFH10N100P
IXFH10N80P
IXFH110N10P
IXFH120N15P
IXFH120N20P
IXFH12N100P
IXFH12N120P
IXFH12N80P
IXFH12N90P
IXFH140N10P
IXFH14N60P
IXFH14N80P
IXFH150N15P
IXFH15N100P
IXFH16N120P
IXFH16N50P
IXFH16N80P
IXFH170N10P
IXFH18N60P
IXFH18N90P
IXFH20N100P
IXFH20N80P
IXFH22N50P
IXFH22N60P
IXFH24N80P
IXFH24N90P
IXFH26N50P
IXFH26N60P
IXFH30N50P
IXFH30N60P
IXFH36N50P
IXFH36N60P
IXFH44N50P
IXFH52N30P
IXFH5N100P
IXFH69N30P
IXFH6N120P
IXFH74N20P
IXFH7N100P
IXFH88N30P
IXFH96N15P
IXFH96N20P
IXFK102N30P
IXFK120N20P
IXFK120N25P
IXFK140N20P
IXFK140N30P
IXFK170N10P
IXFK170N20P
IXFK180N15P
IXFK200N10P
IXFK20N120P
IXFK220N15P
IXFK24N80P
IXFK250N10P
IXFK26N100P
IXFK26N120P
IXFK32N100P
IXFK32N80P
IXFK32N90P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift...
IXFB120N50P2
IXFH42N50P2
IXFH52N50P2
Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™
IXFA220N06T3
IXFA270N06T3
IXFH220N06T3
IXFH270N06T3
The 60V TrenchT3™ Power MOSFETs represent an expansion of the low-voltage Trench MOSFET product lines. With on-resistance as low as 3.1 milliohms, these devices are designed for high-power density, switched-mode...
IXFA3N120
IXFK180N07
IXFK180N10
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode.
IXFA14N60P3
IXFA16N50P3
IXFA16N60P3
IXFA20N50P3
IXFA22N60P3
IXFA26N50P3
IXFA36N30P3
IXFA4N60P3
IXFA5N50P3
IXFA7N60P3
IXFB110N60P3
IXFB132N50P3
IXFB210N30P3
IXFH14N60P3
IXFH16N50P3
IXFH16N60P3
IXFH20N50P3
IXFH22N60P3
IXFH26N50P3
IXFH28N60P3
IXFH34N50P3
IXFH42N60P3
IXFH50N60P3
IXFH60N50P3
IXFH94N30P3
IXFJ26N50P3
IXFK120N30P3
IXFK150N30P3
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit...
IXFH52N30Q The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. They...
IXFB100N50Q3
IXFB40N110Q3
IXFB44N100Q3
IXFB62N80Q3
IXFB82N60Q3
IXFH15N100Q3
IXFH18N100Q3
IXFH30N50Q3
IXFH44N50Q3
IXFH50N30Q3
IXFH70N20Q3
IXFH70N30Q3
IXFK24N100Q3
IXFK32N100Q3
IXFK32N80Q3
The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency.
IXFH40N80XA
IXFH50N80XA
These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low...
IXFA110N15T2
IXFA130N10T2
IXFA180N10T2
IXFA230N075T2
IXFA230N075T2-7
IXFA76N15T2
IXFH110N15T2
IXFH150N17T2
IXFH160N15T2
IXFH230N075T2
IXFH320N10T2
IXFH340N075T2
IXFH400N075T2
IXFH76N15T2
IXFK220N17T2
IXFK240N15T2
IXFK320N17T2
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these...
FDM15-06KC5
FDM47-06KC5
FMD15-06KC5
FMD40-06KC
FMD47-06KC5
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat...
IXFA102N15T
IXFA130N10T
IXFH102N15T
IXFH110N25T
IXFH120N25T
IXFH150N20T
IXFH160N15T
IXFH230N10T
IXFH46N30T
IXFH86N30T
IXFH94N30T
IXFK120N30T
IXFK140N25T
IXFK160N30T
IXFK170N20T
IXFK180N25T
IXFK230N20T
IXFK360N10T
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating...
IXFA14N85XHV
IXFA20N85XHV
IXFA4N85X
IXFA8N85XHV
IXFB70N100X
IXFB90N85X
IXFH14N85X
IXFH20N85X
IXFH26N100X
IXFH30N85X
IXFH32N100X
IXFH40N85X
IXFH50N85X
IXFJ20N85X
IXFK32N100X
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications.
IXFH22N60X2A
IXFH34N60X2A
IXFH46N60X2A
IXFH60N60X2A
IXFH80N60X2A
With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body diodes...

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