Littelfuse, Inc. Datasheets for Metal-Oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more

Page: 1 2 3 4 5 6
Product Name Notes
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and...
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability...
IXFH40N80XA devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance...
IXFH50N80XA devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance...
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon...
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift...
Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™
The 450V S-Class Switchable Current Regulators are available in 2-100mA nominal current rating. They are available in TO-252 and TO-220 packages. These regulators feature 40W of continuous power dissipation. Their...
The 600V X3-Class Ultra Junction MOSFET IXFA36N60X3 is available in 36A nominal current rating and TO-263(D2PAK) package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg.
The 600V X3-Class Ultra Junction MOSFET IXFH36N60X3 is available in 36A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg.
The 600V X3-Class Ultra Junction MOSFET IXFH48N60X3 is available in 48A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg.
The 600V X3-Class Ultra Junction MOSFET IXFH60N60X3 is available in 60A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg.
The 600V X3-Class Ultra Junction MOSFET IXFH78N60X3 is available in 78A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg.
The 600V X3-Class Ultra Junction MOSFET IXFH98N60X3 is available in 98A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg.
The 60V TrenchT3™ Power MOSFETs represent an expansion of the low-voltage Trench MOSFET product lines. With on-resistance as low as 3.1 milliohms, these devices are designed for high-power density, switched-mode...
The 650V X2-Class Ultra Junction MOSFETs are available in 26A nominal current rating. They are available in standard TO-247 package.These devices feature a unique gate charge compensation principle, resulting in...
The 650V X2-Class Ultra Junction MOSFETs are available in 26A nominal current rating. They are available in standard TO-263 package.These devices feature a unique gate charge compensation principle, resulting in...
The 900V S-Class Switchable Current Regulators are available in 1-100mA nominal current rating. They are available in TO-252 and TO-220 packages. These regulators feature 40W of continuous power dissipation. These...
The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses.
The IX4351NE is designed specifically to drive SiC-MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An...
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode.
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit...
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They...
The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency.
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these...
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink.
This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 34A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance...
This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 34A nominal current rating in TO-263 package. These Power MOSFETs feature significantly reduced channel resistance...
This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 46A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance...
This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 54A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance...
This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 70A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance...
This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 90A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance...
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating...
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications.
With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH22N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body...
With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH34N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body...
With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH46N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body...
With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH60N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body...
With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH80N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body...

Next >>