The IXFN180N20 is an N-channel Power MOSFET in a miniBLOC package with aluminum nitride isolation, rated for 200 V drain-source voltage and 180 A continuous drain current. It has a maximum on-resistance of 12.5 mΩ at 90 A and a peak pulse current of 720 A. The device features a fast intrinsic rectifier with a reverse recovery time of 250 ns, avalanche capability, and low package inductance. Maximum power dissipation is 700 W at 25°C, with thermal resistance of 0.18°C/W from junction to case and 0.05°C/W from case to sink. Operating junction temperature ranges from -55°C to 150°C. It supports 2500 Vrms isolation and is RoHS compliant.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
MOSFET, N, SOT-227B; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:180A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:700W; MSL:- RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN180N20 | 14J1682 |
| Product Name | 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | Mosfet, N, Sot-227B; Channel Type Ixys Semiconductor |
| Polarity | N-Channel |
