The IXTY1R6N50D2 is a normally-on N-channel depletion mode MOSFET designed for applications such as audio amplifiers, start-up circuits, and current regulators. It is packaged in a TO-252 case and has a maximum drain-source voltage of 500 V, a continuous drain current of 1.6 A, and a drain-source on-resistance of 2.3 Ω. The device supports a junction temperature range of -55 °C to 150 °C and has a power dissipation of 100 W at 25 °C. The molding epoxies meet UL94V-0 flammability standards.
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
MOSFET, N-CH, 500V, 1.6A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTY1R6N50D2 | 03AH1917 |
| Product Name | 100V - 1700V N-Channel Depletion Mode Power MOSFETs | Mosfet, N-Ch, 500V, 1.6A, To-252; Channel Type Littelfuse |
| Polarity | N-Channel |
