Littelfuse, Inc. 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options IXFT320N10T2

Description
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities
  • 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFT320N10T2 - Littelfuse, Inc.
    Littelfuse, Inc.
  • Mosfet, N-Ch, 100V, 320A, To-268; Channel Type Littelfuse - 03AH0941 - Newark, An Avnet Company
    Newark, An Avnet Company
Description
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities
Datasheet
Datasheet Summary
Powered by GS/AI

The Littelfuse N-Channel MOSFET, part number 03AH0941, is designed for high-performance applications with a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) rating of 320A. It features a low on-resistance (Rds(on)) of 3.5 mOc at a gate-source voltage (Vgs) of 10V, which contributes to its efficiency in power management. The device is avalanche rated and includes a fast intrinsic diode, making it suitable for applications such as synchronous rectification, DC-DC converters, and switch-mode power supplies. The MOSFET operates within a temperature range of -55¬8C to +175¬8C and is housed in a TO-268 package, facilitating surface mount applications. Its robust specifications and high current handling capability make it a viable option for engineers seeking reliable performance in demanding environments.

Datasheet Summary
Powered by GS/AI

The Littelfuse N-Channel MOSFET, part number 03AH0941, is designed for high-performance applications with a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) rating of 320A. It features a low on-resistance (Rds(on)) of 3.5 mOc at a gate-source voltage (Vgs) of 10V, which contributes to its efficiency in power management. The device is avalanche rated and includes a fast intrinsic diode, making it suitable for applications such as synchronous rectification, DC-DC converters, and switch-mode power supplies. The MOSFET operates within a temperature range of -55¬8C to +175¬8C and is housed in a TO-268 package, facilitating surface mount applications. Its robust specifications and high current handling capability make it a viable option for engineers seeking reliable performance in demanding environments.

Suppliers

Company
Product
Description
Supplier Links
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFT320N10T2 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options
IXFT320N10T2
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options IXFT320N10T2
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities

Supplier's Site Datasheet
Mosfet, N-Ch, 100V, 320A, To-268; Channel Type Littelfuse - 03AH0941 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 320A, To-268; Channel Type Littelfuse
03AH0941
Mosfet, N-Ch, 100V, 320A, To-268; Channel Type Littelfuse 03AH0941
MOSFET, N-CH, 100V, 320A, TO-268; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:320A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 100V, 320A, TO-268; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:320A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFT320N10T2 03AH0941
Product Name 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options Mosfet, N-Ch, 100V, 320A, To-268; Channel Type Littelfuse
Polarity N-Channel
Unlock Full Specs
to access all available technical data