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Littelfuse, Inc. 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFH56N30X3

Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Features: Lowest on-resistance RDS(ON)and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages Applications: Battery chargers for light electric vehicles Synchronous rectification in switchingpower supplies Motor control DC-DC converters Uninterruptible power supplies Electric forklifts Class-D audio amplifiers Telecom systems
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Suppliers

Company
Product
Description
Supplier Links
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFH56N30X3 - Littelfuse, Inc.
Chicago, IL, United States
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFH56N30X3
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFH56N30X3
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Features: Lowest on-resistance RDS(ON)and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages Applications: Battery chargers for light electric vehicles Synchronous rectification in switchingpower supplies Motor control DC-DC converters Uninterruptible power supplies Electric forklifts Class-D audio amplifiers Telecom systems

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Features: Lowest on-resistance RDS(ON)and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages Applications: Battery chargers for light electric vehicles Synchronous rectification in switchingpower supplies Motor control DC-DC converters Uninterruptible power supplies Electric forklifts Class-D audio amplifiers Telecom systems

Supplier's Site Datasheet
Mosfet, N-Ch, 300V, 56A, To-247; Channel Type Littelfuse - 03AH0601 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 300V, 56A, To-247; Channel Type Littelfuse
03AH0601
Mosfet, N-Ch, 300V, 56A, To-247; Channel Type Littelfuse 03AH0601
MOSFET, N-CH, 300V, 56A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:56A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 300V, 56A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:56A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH56N30X3 03AH0601
Product Name 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options Mosfet, N-Ch, 300V, 56A, To-247; Channel Type Littelfuse
Polarity N-Channel
V(BR)DSS 300 volts
IDSS 56000 milliamps 56000 milliamps
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