The LSIC1MO170E0750 is a 1700 V, 750 mΩ silicon carbide MOSFET designed for high-frequency, high-efficiency power conversion applications such as solar inverters, switch-mode power supplies, and motor drives. It is packaged in a TO-247-3L case with a maximum package height of 5.309 mm, a width of 16.256 mm, and a length of 20.570 mm. The device has a continuous drain current of 4.4 A at a case temperature of 100 °C and a pulsed drain current of 11 A. It operates with a maximum junction temperature of 175 °C and features a typical thermal resistance from junction to case of 2.5 °C/W. The gate resistance is 29 Ω, and the total gate charge is 13 nC. The MOSFET is normally off at all temperatures and supports gate-source voltages from 5 V to 20 V for DC operation.
Littelfuse 1700V, 750mOhm Silicon Carbide (SiC) MOSFET bring SiC fast switching and energy saving performance to the 1700V voltage range, focusing on auxiliary power supplies. The MOSFET is available in 3 different discrete packages, with the recent addition of a TO-268-2L option with extra clearance between source and gate pin. The separated source pin of the TO-268-7L option reduce significantly the parasitic source inductance path to the driver, which helps improve the efficiency in high power applications. The maximum operating junction temperature is 175 ºC. On-state resistance RDS(ON) 750mΩ (typ) Gate resistance 29Ω typ. Continuous drain current ~4.4A at 100°C Reverse diode current 9A cont. at 25°C Operating temperature junction up to 175°C
N-Channel 1700V 6.2A (Tc) 60W (Tc) Through Hole TO-247AD
SICFET N-CH 1700V 750OHM TO247-3
SICFET N-CH 1700V 750OHM TO247-3
| Littelfuse, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | LSIC1MO170E0750 | 18-LSIC1MO170E0750-ND | LSIC1MO170E0750 | LSIC1MO170E0750 |
| Product Name | Enhancement Mode | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 1700 volts | 1700 volts | ||
| IDSS | 4400 milliamps | 6200 milliamps | ||
| TJ | 175 C (347 F) | -55 to 175 C (-67 to 347 F) | ||
| Polarity | N-Channel | N-Channel; N-Channel |
