Littelfuse 1700V, 750mOhm Silicon Carbide (SiC) MOSFET bring SiC fast switching and energy saving performance to the 1700V voltage range, focusing on auxiliary power supplies. The MOSFET is available in 3 different discrete packages, with the recent addition of a TO-268-2L option with extra clearance between source and gate pin. The separated source pin of the TO-268-7L option reduce significantly the parasitic source inductance path to the driver, which helps improve the efficiency in high power applications. The maximum operating junction temperature is 175 ºC. On-state resistance RDS(ON) 750mΩ (typ) Gate resistance 29Ω typ. Continuous drain current ~4.4A at 100°C Reverse diode current 9A cont. at 25°C Operating temperature junction up to 175°C
N-Channel 1700V 6.2A (Tc) 60W (Tc) Through Hole TO-247AD
SICFET N-CH 1700V 750OHM TO247-3
SICFET N-CH 1700V 750OHM TO247-3
| Littelfuse, Inc. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | LSIC1MO170E0750 | 18-LSIC1MO170E0750-ND | LSIC1MO170E0750 | LSIC1MO170E0750 |
| Product Name | Enhancement Mode | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 1700 volts | 1700 volts | ||
| IDSS | 4400 milliamps | 6200 milliamps | ||
| TJ | 175 C (347 F) | -55 to 175 C (-67 to 347 F) | ||
| Polarity | N-Channel | N-Channel; N-Channel |
