The IXTN102N65X2 is an N-channel enhancement mode MOSFET rated for 650 V drain-source voltage and 76 A continuous drain current, designed for high-power switching applications such as switch-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a miniBLOC with aluminum nitride isolation, weighing 30 g, and features low on-resistance of 30 mΩ at 51 A and 10 V gate drive, avalanche rating, and low package inductance. The device supports a maximum junction temperature of 150°C and meets RoHS standards. Thermal resistance from junction to case is 0.21 °C/W, and from case to sink is 0.05 °C/W. The source terminal can serve as a Kelvin source for gate return. The part is rated for 204 A peak pulsed current and has a maximum transient gate-source voltage of ±40 V. The device is avalanche rated and certified to meet international standard packaging requirements.
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
N-ch X2 Series MOSFET 650V 102A SOT-227
N-ch X2 Series MOSFET 650V 102A SOT-227
N-ch X2 Series MOSFET 650V 102A SOT-227
| Littelfuse, Inc. | RS Components, Ltd. | RS Components, Ltd. | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTN102N65X2 | 9171454 | 9171454P |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode | MOSFETs | MOSFETs |
| Polarity | N-Channel | N-Channel |
