The IXFN60N60 is an N-channel enhancement mode Power MOSFET for high-power switching applications such as DC-DC converters and switched-mode power supplies. It is packaged in a miniBLOC (SOT-227 B) case measuring 31.50 to 31.88 mm in length, with a mounting torque of 1.5 Nm. The device has a drain-source breakdown voltage of 600 V, a continuous drain current of 60 A at 25°C, and a maximum pulsed drain current of 240 A. Its on-state resistance is 75 mΩ at VGS = 10 V, with an avalanche energy rating of 64 mJ. The package includes aluminum nitride isolation, low inductance, and Kelvin source connections. It is rated for a junction temperature range of -55°C to 150°C and features a fast intrinsic rectifier diode with a reverse recovery charge of 1.5 µC.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
MOSFET, N, SOT-227B; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:60A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Power Dissipation:600W; MSL:- RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN60N60 | 14J1693 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Standard - IXFN60N60 | Mosfet, N, Sot-227B; Channel Type Ixys Semiconductor |
| Polarity | N-Channel |
