The IXFN48N50 is an N-channel enhancement mode Power MOSFET for high-power switching applications such as DC-DC converters and switched-mode power supplies. It is packaged in a SOT-227B miniBLOC case, measuring 31.88 mm in length, 8.20 mm in width, and 38.23 mm in height. It has a drain-source breakdown voltage of 500 V, a continuous drain current of 48 A at 25°C, and a pulsed drain current of 192 A. Its maximum on-resistance is 0.10 Ω at 10 V gate-source voltage. The device is avalanche-rated with 30 mJ energy handling and supports a maximum junction temperature of 150°C. Thermal resistance from junction to case is 0.24 K/W. Mounting torque for terminals is 1.5/13 Nm/lb.in., and for screws is 0.9/6 to 1.5/13 Nm/lb.in.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
MOSFET, N CHANNEL, 500V, 48A, SOT-227B; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:48A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN48N50 | 78K4942 |
| Product Name | 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | Mosfet, N Channel, 500V, 48A, Sot-227B; Channel Type Ixys Semiconductor |
| Polarity | N-Channel | N-Channel |
