Littelfuse, Inc. 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFA3N120

Description
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
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Description
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
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Datasheet
Datasheet Summary
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The IXFA3N120 is an N-channel enhancement mode Power MOSFET designed for high-voltage switching applications with a drain-source voltage rating of 1200 V and a continuous drain current of 3 A. It is packaged in a TO-263 case with dimensions of 9.65 mm to 10.29 mm in width and 14.61 mm to 15.88 mm in length. The device features a maximum on-state resistance of 4.5 Ω at 25°C and a thermal resistance from junction to case of 0.62 K/W. It is rated for unclamped inductive switching with an energy of 700 mJ and meets UL 94 V-0 flammability standards. The package is optimized for low gate charge and fast switching, supporting high power density and space savings.

Datasheet Summary
Powered by GS/AI

The IXFA3N120 is an N-channel enhancement mode Power MOSFET designed for high-voltage switching applications with a drain-source voltage rating of 1200 V and a continuous drain current of 3 A. It is packaged in a TO-263 case with dimensions of 9.65 mm to 10.29 mm in width and 14.61 mm to 15.88 mm in length. The device features a maximum on-state resistance of 4.5 Ω at 25°C and a thermal resistance from junction to case of 0.62 K/W. It is rated for unclamped inductive switching with an energy of 700 mJ and meets UL 94 V-0 flammability standards. The package is optimized for low gate charge and fast switching, supporting high power density and space savings.

Suppliers

Company
Product
Description
Supplier Links
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFA3N120 - Littelfuse, Inc.
Rosemont, IL, United States
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFA3N120
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFA3N120
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode

The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXFA3N120
MOSFET Transistor 278-IXFA3N120
Power Field-Effect Transistor, Product overview: IXFA3N120 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFA3N120 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXFA3N120 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFA3N120 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 1.2Kv, 3A, To-263 Rohs Compliant Ixys Semiconductor - 71AH4535 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.2Kv, 3A, To-263 Rohs Compliant Ixys Semiconductor
71AH4535
Mosfet, N-Ch, 1.2Kv, 3A, To-263 Rohs Compliant Ixys Semiconductor 71AH4535
MOSFET, N-CH, 1.2KV, 3A, TO-263 ROHS COMPLIANT: YES

MOSFET, N-CH, 1.2KV, 3A, TO-263 ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFA3N120 278-IXFA3N120 71AH4535
Product Name 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) MOSFET Transistor Mosfet, N-Ch, 1.2Kv, 3A, To-263 Rohs Compliant Ixys Semiconductor
Polarity N-Channel
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