The IXFK100N65X2 is an N-channel enhancement mode MOSFET rated for 650 V drain-source voltage and 100 A continuous drain current, designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is housed in a TO-264 package weighing 10 g, with a maximum junction temperature of 150°C. The device features a typcial on-resistance of 30 mΩ at 25°C, an avalanche energy rating of 3.5 J, and a peak pulsed drain current of 200 A. It includes a fast intrinsic diode with a reverse recovery charge of 1.7 μC at 50 A and a reverse recovery time of 200 ns. The part is avalanche rated, has low package inductance, and supports a maximum dv/dt of 50 V/ns.
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
N-ch X2 Series MOSFET 650V 100A TO-264P
N-ch X2 Series MOSFET 650V 100A TO-264P
N-ch X2 Series MOSFET 650V 100A TO-264P
Power Field-Effect Transistor, Product overview: IXFK100N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK100N65X2 can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 650V, 100A, TO-246P; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:100A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
| Littelfuse, Inc. | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFK100N65X2 | 9171429 | 9171429P | 278-IXFK100N65X2 | 02AC9804 |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode | MOSFETs | MOSFETs | MOSFET Transistor | Mosfet, N-Ch, 650V, 100A, To-246P; Channel Type Ixys Semiconductor |
| Polarity | N-Channel | N-Channel |
