The IXFH21N50 is an N-channel enhancement mode MOSFET for switched-mode power supplies, DC-DC converters, and motor control applications, housed in a TO-247 AD package measuring 20.32 mm length by 9.65 mm width. It has a drain-source breakdown voltage of 500 V, continuous drain current of 21 A at 25°C, and maximum on-resistance of 0.25 Ω at 10 V gate-source voltage. The device is rated for junction temperatures from -55°C to 150°C and has an unclamped inductive switching capability. It features low package inductance, a fast intrinsic rectifier, and complies with international standard packages. Mounting torque is specified at 1.13 Nm (10 lb.in.).
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
N CHANNEL MOSFET, 500V, 21A, TO-247AD; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:21A; On Resistance Rds(on):0.25ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFH21N50 | 97K2540 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Standard - IXFH21N50 | N Channel Mosfet, 500V, 21A, To-247Ad; Transistor Polarity Ixys Semiconductor |
| Polarity | N-Channel | N-Channel |
