The IXFH14N100Q2 is an N-channel enhancement mode MOSFET designed for high-frequency switching applications such as DC-DC converters, resonant-mode power supplies, and laser drivers. It is packaged in a TO-247 case, weighing 6 g, with a maximum drain-source voltage of 1000 V and a continuous drain current of 14 A at 25°C. The device has a maximum on-state resistance of 950 mΩ at 10 V gate-source voltage and 14 A drain current, and features avalanche energy rating of 2.5 J. It supports a peak transient gate-source voltage of ±40 V and a maximum junction temperature of 150°C. The epoxy encapsulation meets UL 94 V-0 flammability classification. The device includes a fast intrinsic rectifier and is rated for high dv/dt performance up to 20 V/ns.
Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs.Advantages: Easy to mount High power density Space savings International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance
MOSFET, N, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:14A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:500W; MSL:-RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFH14N100Q2 | 38K3167 |
| Product Name | 500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | Mosfet, N, To-247; Channel Type Ixys Semiconductor |
| Polarity | N-Channel |
