Littelfuse, Inc. 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK64N60P3

Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Datasheet
Datasheet Summary
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The IXFK64N60P3 is an N-channel enhancement mode power MOSFET designed for high-speed switching applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a TO-264 case with a drain tab and weighs 10 grams. The device has a continuous drain current rating of 64 A at 25°C and a maximum drain-source voltage of 600 V. Its on-state resistance is 100 mΩ at 10 V gate-source voltage and 32 A drain current. The MOSFET features a fast intrinsic diode with a reverse recovery time of 250 ns, is avalanche rated, and has low gate charge and low package inductance. Maximum junction temperature is 150°C. The part meets AEC-Q200 and RoHS standards.

Datasheet Summary
Powered by GS/AI

The IXFK64N60P3 is an N-channel enhancement mode power MOSFET designed for high-speed switching applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a TO-264 case with a drain tab and weighs 10 grams. The device has a continuous drain current rating of 64 A at 25°C and a maximum drain-source voltage of 600 V. Its on-state resistance is 100 mΩ at 10 V gate-source voltage and 32 A drain current. The MOSFET features a fast intrinsic diode with a reverse recovery time of 250 ns, is avalanche rated, and has low gate charge and low package inductance. Maximum junction temperature is 150°C. The part meets AEC-Q200 and RoHS standards.

Suppliers

Company
Product
Description
Supplier Links
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK64N60P3 - Littelfuse, Inc.
Rosemont, IL, United States
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFK64N60P3
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK64N60P3
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
MOSFETs - 8024408P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8024408P
MOSFETs 8024408P
MOSFET N 600V 64A Polar3 HiPerFET TO264

MOSFET N 600V 64A Polar3 HiPerFET TO264

Supplier's Site
MOSFETs - 8024408 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8024408
MOSFETs 8024408
MOSFET N 600V 64A Polar3 HiPerFET TO264

MOSFET N 600V 64A Polar3 HiPerFET TO264

Supplier's Site
MOSFETs - 1684735 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1684735
MOSFETs 1684735
MOSFET N 600V 64A Polar3 HiPerFET TO264

MOSFET N 600V 64A Polar3 HiPerFET TO264

Supplier's Site

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd. RS Components, Ltd.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFK64N60P3 8024408P 8024408
Product Name 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) MOSFETs MOSFETs
Polarity N-Channel N-Channel
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