Littelfuse, Inc. 24 V Bidirectional 250 W Discrete TVS Diode IXTY14N60X2

Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
  • 24 V Bidirectional 250 W Discrete TVS Diode - IXTY14N60X2 - Littelfuse, Inc.
    Littelfuse, Inc.
  • Mosfet, N Ch, 600V, 14A, To-252 Rohs Compliant Ixys Semiconductor - 91AH7729 - Newark, An Avnet Company
    Newark, An Avnet Company
Datasheet
Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Datasheet

Suppliers

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Product
Description
Supplier Links
24 V Bidirectional 250 W Discrete TVS Diode - IXTY14N60X2 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
24 V Bidirectional 250 W Discrete TVS Diode
IXTY14N60X2
24 V Bidirectional 250 W Discrete TVS Diode IXTY14N60X2
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
Mosfet, N Ch, 600V, 14A, To-252 Rohs Compliant Ixys Semiconductor - 91AH7729 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 600V, 14A, To-252 Rohs Compliant Ixys Semiconductor
91AH7729
Mosfet, N Ch, 600V, 14A, To-252 Rohs Compliant Ixys Semiconductor 91AH7729
MOSFET, N CH, 600V, 14A, TO-252 ROHS COMPLIANT: YES

MOSFET, N CH, 600V, 14A, TO-252 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTY14N60X2 91AH7729
Product Name 24 V Bidirectional 250 W Discrete TVS Diode Mosfet, N Ch, 600V, 14A, To-252 Rohs Compliant Ixys Semiconductor
Polarity N-Channel
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