Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
MOSFET, N CH, 600V, 14A, TO-252 ROHS COMPLIANT: YES
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTY14N60X2 | 91AH7729 |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode | Mosfet, N Ch, 600V, 14A, To-252 Rohs Compliant Ixys Semiconductor |
| Polarity | N-Channel |
