The IXFH24N50 is an N-channel enhancement mode MOSFET designed for switched-mode and resonant-mode power supplies, DC choppers, and AC motor control. It is packaged in a TO-247 AD case, measuring 20.32 mm in length, 16.26 mm in width, and 5.3 mm in height, with a drain tab. It has a maximum drain-source voltage of 500 V, a continuous drain current of 24 A at 25°C, and a maximum on-state resistance of 0.23 Ω at 10 V gate-source voltage. The device supports an unclamped inductive switching energy of 30 mJ and has a maximum junction temperature of 150°C. It meets international standard package requirements and features a fast intrinsic rectifier, low package inductance, and ease of mounting with a single screw. The TO-247 case includes an isolated mounting hole for thermal management.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
N CHANNEL MOSFET, 500V, 24A, TO-247AD; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:24A; On Resistance Rds(on):0.23ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFH24N50 | 10J5120 |
| Product Name | 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | N Channel Mosfet, 500V, 24A, To-247Ad; Transistor Polarity Ixys Semiconductor |
| Polarity | N-Channel | N-Channel |
