IXTA62N15P is an N-channel enhancement mode MOSFET designed for high-power switching applications, featuring a 150 V drain-source breakdown voltage and a continuous drain current of 62 A at 25°C. It is packaged in a TO-263 case with a drain tab, weighing 3 g, and has a maximum junction temperature of 175°C. The device has a maximum on-state resistance of 40 mΩ at V_GS = 10 V and I_D = 0.5 I_D25, with an avalanche energy rating of 30 mJ at 25°C. It is rated for unclamped inductive switching and has a dv/dt capability of 10 V/ns. The MOSFET meets RoHS standards and is avalanche rated with low package inductance for easier driving and protection.
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
MOSFET, N-CH, 150V, 62A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:62A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5.5V RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTA62N15P | 03AH1408 |
| Product Name | 100V - 1200V N-Channel Standard Power MOSFETs | Mosfet, N-Ch, 150V, 62A, To-263; Channel Type Littelfuse |
| Polarity | N-Channel |
