The IXFN110N85X is an N-channel enhancement mode power MOSFET rated for 850V drain-to-source voltage and 110A continuous drain current, designed for high-power switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a miniBLOC (SOT-227) case, weighing 30 g, with a mounting torque of 1.5 Nm and terminal connection torque of 1.3 Nm. The device features a low on-resistance of 33 mΩ at 55 A and 10 V gate drive, an avalanche energy rating of 3 J, and a fast intrinsic diode with a reverse recovery charge of 5.5 µC. The device is avalanche rated, has an isolation voltage of 2500 V~, and operates over a junction temperature range of -55°C to 150°C.
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Ultra junction MOSFET 110A 850V SOT227
Ultra junction MOSFET 110A 850V SOT227
| Littelfuse, Inc. | RS Components, Ltd. | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN110N85X | 1464249 |
| Product Name | 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options | MOSFETs |
| Polarity | N-Channel | N-Channel |
