The IXFT78N60X3HV is an N-channel enhancement mode MOSFET designed for switch-mode, resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-268HV case with a weight of 4 g. The device has a drain-source breakdown voltage of 600 V, a continuous drain current rating of 78 A at 25°C, and a pulsed drain current rating of 120 A. Its maximum drain-source on-state resistance is 38 mΩ at a gate-source voltage of 10 V and a drain current of 39 A. The MOSFET is avalanche rated with an energy rating of 2.2 J at 25°C and features a thermal resistance junction-to-case of 0.16 °C/W. It supports a maximum junction temperature of 150°C and has a dv/dt capability of 50 V/ns. The gate-source voltage is rated at ±20 V continuous and ±30 V transient.
The 600V X3-Class Ultra Junction MOSFETs are available in versions featuring 36A-98A nominal current rating. They are available in various TO-247, TO-263, TO-220 and TO-268HV packages.These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg. They feature the lowest figures of merit (FOM) RDS(on)Qg and RDS(on)RthJC. These benefits enable designers to achieve higher efficiency using simplified thermal design. This HiPerFET™ series of power MOSFETs feature body diodes which offer low reverse recovery charge (QRM) and short reverse recovery time (trr). Low static losses Well-suited for high frequency applications Simplified thermal design High ruggedness against overvoltage Low gate drive power demand
MOSFET, N-CH, 600V, 78A, TO-268HV
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFT78N60X3HV | 51AK3536 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Ultra Junction - Series: X3-Class - IXFT78N60X3HV | Mosfet, N-Ch, 600V, 78A, To-268Hv Littelfuse |
| Polarity | N-Channel |
