The IXFP4N100Q is an N-channel enhancement mode Power MOSFET in a TO-220AB package, rated for 1000 V drain-source breakdown voltage and 4 A continuous drain current at 25°C. It has a maximum on-state resistance of 3.0 Ω at 10 V gate-source voltage and 0.5 times the rated drain current. The device features a fast intrinsic diode with a reverse recovery charge of 0.52 μC and is avalanche rated for 700 mJ energy. Thermal resistance from junction to case is 0.50 °C/W. It is designed for use in DC-DC converters, battery chargers, switch-mode power supplies, and lighting controls.
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:156W; MSL:- RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFP4N100Q | 58M7633 |
| Product Name | 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | Mosfet, N, To-220; Channel Type Ixys Semiconductor |
| Polarity | N-Channel |
