Littelfuse, Inc. 600V - 800V N-Channel Super Junction Power MOSFETs IXKR40N60C

Description
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate 3rd generation CoolMOS™(1) power MOSFET Enhanced total power density Low thermal resistance
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Description
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate 3rd generation CoolMOS™(1) power MOSFET Enhanced total power density Low thermal resistance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
600V - 800V N-Channel Super Junction Power MOSFETs - IXKR40N60C - Littelfuse, Inc.
Rosemont, IL, United States
600V - 800V N-Channel Super Junction Power MOSFETs
IXKR40N60C
600V - 800V N-Channel Super Junction Power MOSFETs IXKR40N60C
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate 3rd generation CoolMOS™(1) power MOSFET Enhanced total power density Low thermal resistance

These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate 3rd generation CoolMOS™(1) power MOSFET Enhanced total power density Low thermal resistance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 38A 600V 0.7ohm MOSFET Transistor
278-IXKR40N60C
N-Channel 38A 600V 0.7ohm MOSFET Transistor 278-IXKR40N60C
Power Field-Effect Transistor, 38A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN Product overview: IXKR40N60C from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 38A, 600V, 0.7ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 38A, 600V, 0.7ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXKR40N60C can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 38A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN Product overview: IXKR40N60C from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 38A, 600V, 0.7ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 38A, 600V, 0.7ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXKR40N60C can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N, Isoplus247; Transistor Polarity Ixys Semiconductor - 24M3049 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, Isoplus247; Transistor Polarity Ixys Semiconductor
24M3049
Mosfet, N, Isoplus247; Transistor Polarity Ixys Semiconductor 24M3049
MOSFET, N, ISOPLUS247; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:38A; On Resistance Rds(on):0.07ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; No. of Pins:3Pins RoHS Compliant: Yes

MOSFET, N, ISOPLUS247; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:38A; On Resistance Rds(on):0.07ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXKR40N60C 278-IXKR40N60C 24M3049
Product Name 600V - 800V N-Channel Super Junction Power MOSFETs N-Channel 38A 600V 0.7ohm MOSFET Transistor Mosfet, N, Isoplus247; Transistor Polarity Ixys Semiconductor
Polarity N-Channel
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