Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH24N80P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH24N80P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH24N80P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH24N80P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 24A 800V 0.4ohm MOSFET Transistor
278-IXFH24N80P
N-Channel 24A 800V 0.4ohm MOSFET Transistor 278-IXFH24N80P
Power Field-Effect Transistor, 24A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 Product overview: IXFH24N80P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 24A, 800V, 0.4ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 24A, 800V, 0.4ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH24N80P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 24A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 Product overview: IXFH24N80P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 24A, 800V, 0.4ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 24A, 800V, 0.4ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH24N80P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 194079 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
194079
MOSFETs 194079
MOSFET N-Channel 800V 24A TO247AD

MOSFET N-Channel 800V 24A TO247AD

Supplier's Site
MOSFETs - 9200754 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9200754
MOSFETs 9200754
MOSFET N-Channel 800V 24A TO247AD

MOSFET N-Channel 800V 24A TO247AD

Supplier's Site
MOSFETs - 194079P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
194079P
MOSFETs 194079P
MOSFET N-Channel 800V 24A TO247AD

MOSFET N-Channel 800V 24A TO247AD

Supplier's Site
Mosfet, N, To-247; Channel Type Ixys Semiconductor - 58M7597 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-247; Channel Type Ixys Semiconductor
58M7597
Mosfet, N, To-247; Channel Type Ixys Semiconductor 58M7597
MOSFET, N, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:24A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:650W RoHS Compliant: Yes

MOSFET, N, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:24A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:650W RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH24N80P 278-IXFH24N80P 194079 194079P 58M7597
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 24A 800V 0.4ohm MOSFET Transistor MOSFETs MOSFETs Mosfet, N, To-247; Channel Type Ixys Semiconductor
Polarity N-Channel N-Channel N-Channel
Package Type TO-247; TO-247 TO-247; To-247ad TO-247; TO-247 TO-3; TO-247
MOSFET Operating Mode Enhancement
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