Littelfuse, Inc. Datasheets for Schottky Diodes
Schottky diodes in their simplest form consist of a metal layer that contacts a semiconductor element. The metal / semiconductor junctions exhibit rectifying behavior (i.e., the current passes through the structure more readily with one polarity than the other).
Schottky Diodes: Learn more
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Product Name | Notes |
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Diodes in various packages made for main rectification in 1 phase bridge configurations. | |
Features: Very low Vf Extremely low switching losses Low Irm values Improved thermal behavior High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Applications: Rectifiers... | |
Littelfuse DST series Ultra Low VF Schottky Barrier Rectifier is designed to meet the general requirements of automotive applications by providing high temperature, low leakage and lower VF products. It... | |
Littelfuse DST series Ultra Low VF Schottky Barrier Rectifier is designed to meet the general requirements of automotive applications by providing high temperature, low leakage and lower VF products.It is... | |
Littelfuse DST series Ultra Low VF Schottky Barrier Rectifier is designed to meet the general requirements of commercial and industry applications by providing high temperature, low leakage and lower VF... | |
Littelfuse manufactures 15A rms to 25A rms rectifiers with voltages rated from 200V to 1000V. Due to the electrically-isolate d TO-220 package, these rectifiers may be used in common anode... | |
The discrete Standard Diode series comes with a broad variety of packages and breakdown voltages up to 1800V. | |
The Fast Dual Diode series offers various packages and breakdown voltages up to 1200V. Utilizing FRED dies enables fast reverse recovery capabilities. | |
The Fast Single Phase Bridges series offers various packages and breakdown voltages up to 1200V. Utilizing HiPerFRED dies enables very fast reverse recovery capabilities. | |
The Fast Three Phase Bridges series offers various packages and breakdown voltages up to 1200V. Utilizing FRED and HiPerFRED dies enables fast and very fast reverse recovery capabilities. | |
The FRED Low Vf series offers improved forward voltage characteristics and breakdown voltages up to 1200V. | |
The HiperDynFRED series offers improved forward voltage characteristics and breakdown voltages up to 1200V. | |
The HiperFRED Extreme Fast series offers improved reverse recovery characteristics and breakdown voltages up to 1200V. | |
The HiperFRED Low Vf series offers improved forward voltage characteristics and breakdown voltages up to 1200V. | |
The Schottky Extreme Low Vf series offers improved forward voltage with extreme low Vf values and breakdown voltages up to 150V. | |
The Schottky Low leakage series offers various packages with improved leakage currents and breakdown voltages up to 200V. | |
The Schottky Low Vf series offers improved forward voltage characteristics and breakdown voltages up to 150V. | |
The SONIC series offers improved reverse recovery characteristics with hard turn-off capability and breakdown voltages up to 1800V. | |
This series of silicon carbide (SiC) Schottky diodes has neg¬ligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal... | |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal... | |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175°. These diodes series are ideal for... | |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal... | |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.These diodes series are ideal for... | |
Two 1200V/10A SiC Schottky diodes built in an isolated discrete packages, in a phase leg confirguration. This product can be used to reduce the component count, for example in rectifier... | |
Two 1200V/20A SiC Schottky diodes built in an isolated discrete packages, in a phase leg confirguration. This product can be used to reduce the component count, for example in rectifier... |
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