The IXTH90P10P is a P-channel enhancement mode MOSFET designed for high-power switching applications such as high-side switches, push-pull amplifiers, and DC choppers. It is packaged in a TO-247 case, measuring 20.80 to 21.46 mm in length and 15.75 to 16.26 mm in width, with a weight of 4 g. It has a maximum drain-source voltage of -100 V, continuous drain current of -90 A at 25°C, and a drain-source on-resistance of 25 mΩ at VGS = -10 V and ID = -45 A. The device is avalanche rated, features a fast intrinsic diode, and has a maximum junction temperature of 150°C. Thermal resistance from junction to case is 0.21 °C/W. The gate-source threshold voltage ranges from -2.0 V to -4.0 V, and the gate charge is 120 nC. It complies with standard package dimensions for TO-247.
Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching Fast intrinsic diode Rugged PolarP™ process Avalanche rated Low package inductance Dynamic dv/dt rated
MOSFET, P-CH, 100V, 90A, TO-247; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:90A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTH90P10P | 03AH1544 |
| Product Name | -100V to -600V P-Channel Power MOSFETs | Mosfet, P-Ch, 100V, 90A, To-247; Channel Type Littelfuse |
| Polarity | P-Channel |
