Littelfuse, Inc. 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options IXTN600N04T2

Description
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities
  • 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options - IXTN600N04T2 - Littelfuse, Inc.
    Littelfuse, Inc.
  • Mosfet, N-Ch, 40V, 600A, Sot-227; Channel Type Littelfuse - 03AH1600 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options - IXTN600N04T2 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options
IXTN600N04T2
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options IXTN600N04T2
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 400V 600A MOSFET Transistor
278-IXTN600N04T2
N-Channel 400V 600A MOSFET Transistor 278-IXTN600N04T2
N-Channel MOSFET, 400V, 600A, TO-247 Product overview: IXTN600N04T2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 400V, 600A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 600A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTN600N04T2 can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 400V, 600A, TO-247 Product overview: IXTN600N04T2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 400V, 600A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 600A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTN600N04T2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 40V, 600A, Sot-227; Channel Type Littelfuse - 03AH1600 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 600A, Sot-227; Channel Type Littelfuse
03AH1600
Mosfet, N-Ch, 40V, 600A, Sot-227; Channel Type Littelfuse 03AH1600
MOSFET, N-CH, 40V, 600A, SOT-227; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:600A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V; No. of Pins:4PinsRoHS Compliant: Yes

MOSFET, N-CH, 40V, 600A, SOT-227; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:600A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V; No. of Pins:4PinsRoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTN600N04T2 278-IXTN600N04T2 03AH1600
Product Name 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options N-Channel 400V 600A MOSFET Transistor Mosfet, N-Ch, 40V, 600A, Sot-227; Channel Type Littelfuse
Polarity N-Channel
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