The IXTN600N04T2 is a 40V N-channel enhancement mode power MOSFET designed for high-current switching applications such as DC-DC converters and primary-side switching. It is housed in a miniBLOC SOT-227 package weighing 30 g and features an aluminum nitride isolation substrate. The device has a maximum drain-source voltage of 40 V, a continuous drain current rating of 200 A at 25°C case temperature, and a pulsed drain current capability of 1800 A. Its on-state resistance is 1.3 mΩ at 10 V gate-source voltage and 100 A drain current. The MOSFET is avalanche rated, with a single-pulse avalanche energy rating of 3 J, and supports an operating junction temperature range of -55°C to 175°C. It meets a 2500 V~ isolation voltage rating and is qualified for high power density applications.
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities
N-Channel MOSFET, 400V, 600A, TO-247 Product overview: IXTN600N04T2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 400V, 600A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 600A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTN600N04T2 can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 40V, 600A, SOT-227; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:600A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V; No. of Pins:4PinsRoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTN600N04T2 | 278-IXTN600N04T2 | 03AH1600 |
| Product Name | 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options | N-Channel 400V 600A MOSFET Transistor | Mosfet, N-Ch, 40V, 600A, Sot-227; Channel Type Littelfuse |
| Polarity | N-Channel |
