The IXFK73N30 is an N-channel enhancement mode Power MOSFET designed for high-current switching applications such as DC-DC converters, synchronous rectification, and switched-mode power supplies. It is packaged in a TO-264 AA case measuring 26.16 mm maximum length with a mounting footprint of 25.91 mm by 19.96 mm. The device has a drain-source breakdown voltage of 300 V, continuous drain current of 73 A at 25°C, and a maximum on-resistance of 45 mΩ at 10 V gate bias. It is avalanche rated with an unclamped inductive switching energy rating of 30 mJ and features a fast intrinsic rectifier with a reverse recovery charge of 2 µC. The case-to-junction thermal resistance is 0.25 K/W, and the gate-source voltage is rated at ±20 V continuous, ±30 V transient. The device meets JEDEC TO-264 AA package standards.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
MOSFET, N, TO-264; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:73A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:500W RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFK73N30 | 97K2547 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Standard - IXFK73N30 | Mosfet, N, To-264; Channel Type Ixys Semiconductor |
| Polarity | N-Channel |
