Littelfuse, Inc. 2000V - 3000V N-Channel Standard Power MOSFETs IXTT1N300P3HV

Description
Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid. Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving. Advantages: Easy to mount Space savings High power density Proprietory high-voltage packages High blocking voltage Positive temperature coefficient of RDSON
Description
Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid. Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving. Advantages: Easy to mount Space savings High power density Proprietory high-voltage packages High blocking voltage Positive temperature coefficient of RDSON
Datasheet
Datasheet Summary
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The IXTT1N300P3HV is an N-channel enhancement mode MOSFET designed for high-voltage applications such as power supplies, capacitor discharge, and pulse circuits. It is packaged in a TO-268HV case with a drain tab and weighs 4.0 g. The device has a maximum drain-source voltage of 3000 V, a continuous drain current of 1.00 A at 25°C, and a power dissipation of 195 W. Its on-state resistance is 50 Ω at a gate-source voltage of 10 V and a drain current of 0.5 A. The junction operating temperature range is -55°C to 150°C, with a maximum lead temperature for soldering of 300°C. Thermal resistance from junction to case is 0.64 °C/W.

Datasheet Summary
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The IXTT1N300P3HV is an N-channel enhancement mode MOSFET designed for high-voltage applications such as power supplies, capacitor discharge, and pulse circuits. It is packaged in a TO-268HV case with a drain tab and weighs 4.0 g. The device has a maximum drain-source voltage of 3000 V, a continuous drain current of 1.00 A at 25°C, and a power dissipation of 195 W. Its on-state resistance is 50 Ω at a gate-source voltage of 10 V and a drain current of 0.5 A. The junction operating temperature range is -55°C to 150°C, with a maximum lead temperature for soldering of 300°C. Thermal resistance from junction to case is 0.64 °C/W.

Suppliers

Company
Product
Description
Supplier Links
2000V - 3000V N-Channel Standard Power MOSFETs - IXTT1N300P3HV - Littelfuse, Inc.
Rosemont, IL, United States
2000V - 3000V N-Channel Standard Power MOSFETs
IXTT1N300P3HV
2000V - 3000V N-Channel Standard Power MOSFETs IXTT1N300P3HV
Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid. Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving. Advantages: Easy to mount Space savings High power density Proprietory high-voltage packages High blocking voltage Positive temperature coefficient of RDSON

Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid. Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving. Advantages: Easy to mount Space savings High power density Proprietory high-voltage packages High blocking voltage Positive temperature coefficient of RDSON

Supplier's Site Datasheet
Mosfet, N-Ch, 3Kv, 1A, To-268Hv; Channel Type Littelfuse - 03AH1803 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 3Kv, 1A, To-268Hv; Channel Type Littelfuse
03AH1803
Mosfet, N-Ch, 3Kv, 1A, To-268Hv; Channel Type Littelfuse 03AH1803
MOSFET, N-CH, 3KV, 1A, TO-268HV; Channel Type:N Channel; Drain Source Voltage Vds:3kV; Continuous Drain Current Id:1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Product Range:-RoHS Compliant: Yes

MOSFET, N-CH, 3KV, 1A, TO-268HV; Channel Type:N Channel; Drain Source Voltage Vds:3kV; Continuous Drain Current Id:1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Product Range:-RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTT1N300P3HV 03AH1803
Product Name 2000V - 3000V N-Channel Standard Power MOSFETs Mosfet, N-Ch, 3Kv, 1A, To-268Hv; Channel Type Littelfuse
Polarity N-Channel
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