The IXFQ28N60P3 is an N-channel enhancement mode Power MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, laser drivers, and motor drives. It is packaged in a TO-3P case with a weight of 5.5 g and features an avalanche-rated structure with a fast intrinsic rectifier. The device has a drain-source voltage rating of 600 V, a continuous drain current of 28 A at 25°C, and a drain-source on-resistance of 260 mΩ at 10 V gate-source voltage. It supports a pulsed drain current of up to 70 A, an avalanche energy of 500 mJ, and a maximum power dissipation of 695 W. Thermal resistance from junction to case is 0.18 °C/W. The operating junction temperature ranges from -55°C to 150°C, with a storage temperature range of -55°C to 150°C. The maximum lead temperature for soldering is 300°C for 10 seconds. Mounting torque is specified at 1.13 Nm (10 lb.in).
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
MOSFET, N-CH, 600V, 28A, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:28A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Qualification:-RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFQ28N60P3 | 02AC9819 |
| Product Name | 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | Mosfet, N-Ch, 600V, 28A, To-3P; Channel Type Ixys Semiconductor |
| Polarity | N-Channel |
