The IXTP3N100D2 is a normally-on N-channel depletion mode MOSFET for applications requiring continuous conduction, such as audio amplifiers, start-up circuits, and current regulators. It is packaged in a TO-220AB case, weighing 3.0 g, with a maximum drain-source voltage of 1000 V and a continuous drain current of 3 A. The drain-source on-resistance is 6 Ω at VGS = 0 V and ID = 1.5 A. The device operates with a junction temperature range of -55 °C to 150 °C and has a power dissipation rating of 125 W at 25 °C. Thermal resistance from junction to case is 0.50 °C/W. The molding epoxy meets UL94V-0 flammability classification. Gate-source voltage is limited to ±20 V continuous and ±30 V transient. The characteristics are specified at 25 °C unless otherwise noted.
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
MOSFET, N-CH, 1KV, 3A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:-; No. of Pins:3Pins RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTP3N100D2 | 03AH1672 |
| Product Name | 100V - 1700V N-Channel Depletion Mode Power MOSFETs | Mosfet, N-Ch, 1Kv, 3A, To-220Ab; Channel Type Littelfuse |
| Polarity | N-Channel |
