The IXTY02N120P is an N-channel enhancement mode power MOSFET rated for 1200 V drain-source voltage and 0.2 A continuous drain current, designed for use in DC-DC converters, switch-mode power supplies, motor drives, and laser drivers. It is packaged in a TO-252 case measuring 0.35 g and features an avalanche rating of 40 mJ, a maximum on-state resistance of 75 Ω at 0.2 A, and a lowgate charge of 4.70 nC. The device has a maximum junction temperature of 150 °C, a thermal resistance of 3.8 °C/W from junction to case, and a fast intrinsic rectifier with reverse recovery time of 1.6 µs. It is rated for a transient gate-source voltage of ±30 V and a maximum lead temperature of 260 °C for 10 seconds. The part is avalanche rated, has low package inductance, and meets international standard packages.
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
1200V N-Ch MOSFET, 0.2A, 0.075Ω, TO-252 Product overview: IXTY02N120P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 0.2A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 0.2A, TO-252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTY02N120P can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 1.2KV, 0.2A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:1.2kV; Continuous Drain Current Id:200mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTY02N120P | 278-IXTY02N120P | 03AH1897 |
| Product Name | 100V - 1200V N-Channel Standard Power MOSFETs | 1200V 0.2A TO-252 MOSFET Transistor | Mosfet, N-Ch, 1.2Kv, 0.2A, To-252; Channel Type Littelfuse |
| Polarity | N-Channel |
