Littelfuse, Inc. Enhancement Mode LSIC1MO120G0025

Description
Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the pin arrangement simplify the PCB routing, but the Kelvin source connection also reduces the stray inductance in the gate drive circuit. This in turn leads to improvement in efficiency, EMI behavior, and switching performance.The MOSFETs exhibit superior gate oxide reliability and are optimized for switching performance. Positive temperature coefficient 175ºC maximum operating junction temperature Fast and low losses switching, MOSFETs optimized for high frequency switching SiC diodes with nearly zero reverse recovery current Dedicated Kelvin connection to source Low RthJC
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Description
Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the pin arrangement simplify the PCB routing, but the Kelvin source connection also reduces the stray inductance in the gate drive circuit. This in turn leads to improvement in efficiency, EMI behavior, and switching performance.The MOSFETs exhibit superior gate oxide reliability and are optimized for switching performance. Positive temperature coefficient 175ºC maximum operating junction temperature Fast and low losses switching, MOSFETs optimized for high frequency switching SiC diodes with nearly zero reverse recovery current Dedicated Kelvin connection to source Low RthJC
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Suppliers

Company
Product
Description
Supplier Links
Enhancement Mode - LSIC1MO120G0025 - Littelfuse, Inc.
Rosemont, IL, United States
Enhancement Mode
LSIC1MO120G0025
Enhancement Mode LSIC1MO120G0025
Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the pin arrangement simplify the PCB routing, but the Kelvin source connection also reduces the stray inductance in the gate drive circuit. This in turn leads to improvement in efficiency, EMI behavior, and switching performance.The MOSFETs exhibit superior gate oxide reliability and are optimized for switching performance. Positive temperature coefficient 175ºC maximum operating junction temperature Fast and low losses switching, MOSFETs optimized for high frequency switching SiC diodes with nearly zero reverse recovery current Dedicated Kelvin connection to source Low RthJC

Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the pin arrangement simplify the PCB routing, but the Kelvin source connection also reduces the stray inductance in the gate drive circuit. This in turn leads to improvement in efficiency, EMI behavior, and switching performance.The MOSFETs exhibit superior gate oxide reliability and are optimized for switching performance. Positive temperature coefficient 175ºC maximum operating junction temperature Fast and low losses switching, MOSFETs optimized for high frequency switching SiC diodes with nearly zero reverse recovery current Dedicated Kelvin connection to source Low RthJC

Supplier's Site Datasheet
Single FETs, MOSFETs - 18-LSIC1MO120G0025-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
18-LSIC1MO120G0025-ND
Single FETs, MOSFETs 18-LSIC1MO120G0025-ND
N-Channel 1200V 100A (Tc) 500W (Tc) Through Hole TO-247-4L

N-Channel 1200V 100A (Tc) 500W (Tc) Through Hole TO-247-4L

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - LSIC1MO120G0025 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
LSIC1MO120G0025
Discrete Semiconductor Products - Transistors - FETs, MOSFETs LSIC1MO120G0025
MOSFET SIC 1200V 70A TO247-4L

MOSFET SIC 1200V 70A TO247-4L

Supplier's Site

Technical Specifications

  Littelfuse, Inc. DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number LSIC1MO120G0025 18-LSIC1MO120G0025-ND LSIC1MO120G0025
Product Name Enhancement Mode Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 1200 volts
IDSS 70000 milliamps
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