The LSIC1MO120G0025 is a 1200 V, 25 mΩ N-channel silicon carbide MOSFET in a TO-247-4L package with a separate driver source pin for reduced gate loop inductance. It has a continuous drain current of 70 A at TC = 100 °C, a maximum power dissipation of 500 W, and a junction-to-case thermal resistance of 0.3 °C/W. The device operates with a junction temperature range of -55 °C to 175 °C and is RoHS compliant, lead-free, and halogen-free. It features normally-off operation, ultra-low on-resistance, and optimized switching performance for high-frequency applications such as solar inverters, UPS, and motor drives.
Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the pin arrangement simplify the PCB routing, but the Kelvin source connection also reduces the stray inductance in the gate drive circuit. This in turn leads to improvement in efficiency, EMI behavior, and switching performance.The MOSFETs exhibit superior gate oxide reliability and are optimized for switching performance. Positive temperature coefficient 175ºC maximum operating junction temperature Fast and low losses switching, MOSFETs optimized for high frequency switching SiC diodes with nearly zero reverse recovery current Dedicated Kelvin connection to source Low RthJC
N-Channel 1200V 100A (Tc) 500W (Tc) Through Hole TO-247-4L
MOSFET SIC 1200V 70A TO247-4L
| Littelfuse, Inc. | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | LSIC1MO120G0025 | 18-LSIC1MO120G0025-ND | LSIC1MO120G0025 |
| Product Name | Enhancement Mode | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | |
| MOSFET Operating Mode | Enhancement | ||
| V(BR)DSS | 1200 volts | ||
| IDSS | 70000 milliamps |
