Littelfuse, Inc. 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFX150N30P3

Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Datasheet
Datasheet Summary
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The IXFX150N30P3 is an N-channel enhancement mode power MOSFET with a 300 V drain-source breakdown voltage, 150 A continuous drain current, and an on-resistance of 19 mΩ at 25°C. It features a fast intrinsic diode, avalanche rating, and is housed in a PLUS247 package. The device supports a maximum junction temperature of 150°C, with thermal resistance from junction to case of 0.096°C/W. It is rated for a transient gate-source voltage of ±30 V and a maximum drain-source dv/dt of 35 V/ns. The part meets RoHS standards and is designed for applications including DC-DC converters, battery chargers, switch-mode power supplies, and motor drives.

Datasheet Summary
Powered by GS/AI

The IXFX150N30P3 is an N-channel enhancement mode power MOSFET with a 300 V drain-source breakdown voltage, 150 A continuous drain current, and an on-resistance of 19 mΩ at 25°C. It features a fast intrinsic diode, avalanche rating, and is housed in a PLUS247 package. The device supports a maximum junction temperature of 150°C, with thermal resistance from junction to case of 0.096°C/W. It is rated for a transient gate-source voltage of ±30 V and a maximum drain-source dv/dt of 35 V/ns. The part meets RoHS standards and is designed for applications including DC-DC converters, battery chargers, switch-mode power supplies, and motor drives.

Suppliers

Company
Product
Description
Supplier Links
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFX150N30P3 - Littelfuse, Inc.
Rosemont, IL, United States
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFX150N30P3
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFX150N30P3
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
Singapore, Singapore
300V 150A MOSFET Transistor
278-IXFX150N30P3
300V 150A MOSFET Transistor 278-IXFX150N30P3
Trans MOSFET N-CH 300V 150A 3-Pin(3+Tab) PLUS 247 Product overview: IXFX150N30P3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 300V, 150A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 300V, 150A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFX150N30P3 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 300V 150A 3-Pin(3+Tab) PLUS 247 Product overview: IXFX150N30P3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 300V, 150A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 300V, 150A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFX150N30P3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 8024495P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8024495P
MOSFETs 8024495P
MOSFET 300V 150A Polar3 HiPerFET PLUS247

MOSFET 300V 150A Polar3 HiPerFET PLUS247

Supplier's Site
MOSFETs - 8024495 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8024495
MOSFETs 8024495
MOSFET 300V 150A Polar3 HiPerFET PLUS247

MOSFET 300V 150A Polar3 HiPerFET PLUS247

Supplier's Site
MOSFETs - 1684746 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1684746
MOSFETs 1684746
MOSFET 300V 150A Polar3 HiPerFET PLUS247

MOSFET 300V 150A Polar3 HiPerFET PLUS247

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFX150N30P3 278-IXFX150N30P3 8024495P 8024495
Product Name 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) 300V 150A MOSFET Transistor MOSFETs MOSFETs
Polarity N-Channel N-Channel
Package Type TO-247; TO-247 PLUS PLUS247 Plus247
MOSFET Operating Mode Enhancement Enhancement
V(BR)DSS 300 volts
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