Littelfuse, Inc. -50V to -200V P-Channel Power MOSFETs IXTK210P10T

Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
  • -50V to -200V P-Channel Power MOSFETs - IXTK210P10T - Littelfuse, Inc.
    Littelfuse, Inc.
  • Mosfet, P-Ch, 100V, 210A, 1.04Kw; Channel Type Littelfuse - 03AH1568 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, 210A, 100V, 1.04Kw, To-264-3 Rohs Compliant Littelfuse - 29AK0483 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
-50V to -200V P-Channel Power MOSFETs - IXTK210P10T - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
-50V to -200V P-Channel Power MOSFETs
IXTK210P10T
-50V to -200V P-Channel Power MOSFETs IXTK210P10T
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
MOSFET Transistor
278-IXTK210P10T
MOSFET Transistor 278-IXTK210P10T
Power Field-Effect Transistor, Product overview: IXTK210P10T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTK210P10T can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXTK210P10T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTK210P10T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, P-Ch, 100V, 210A, 1.04Kw; Channel Type Littelfuse - 03AH1568 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 100V, 210A, 1.04Kw; Channel Type Littelfuse
03AH1568
Mosfet, P-Ch, 100V, 210A, 1.04Kw; Channel Type Littelfuse 03AH1568
MOSFET, P-CH, 100V, 210A, 1.04KW; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:210A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, P-CH, 100V, 210A, 1.04KW; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:210A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, 210A, 100V, 1.04Kw, To-264-3 Rohs Compliant Littelfuse - 29AK0483 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, 210A, 100V, 1.04Kw, To-264-3 Rohs Compliant Littelfuse
29AK0483
Mosfet, 210A, 100V, 1.04Kw, To-264-3 Rohs Compliant Littelfuse 29AK0483
MOSFET, 210A, 100V, 1.04KW, TO-264-3 ROHS COMPLIANT: YES

MOSFET, 210A, 100V, 1.04KW, TO-264-3 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTK210P10T 278-IXTK210P10T 03AH1568 29AK0483
Product Name -50V to -200V P-Channel Power MOSFETs MOSFET Transistor Mosfet, P-Ch, 100V, 210A, 1.04Kw; Channel Type Littelfuse Mosfet, 210A, 100V, 1.04Kw, To-264-3 Rohs Compliant Littelfuse
Polarity P-Channel
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