Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0120 1200 V come in ratings of 1200 V, 120 mOhm in a TO-247-3L package. Optimized for high frequency, high-efficiency applications Extremely low gate charge and output capacitance Low gate resistance for high-frequency switching Normally-off operation at all temperatures Ultra-low on-resistance
MOSFET, N-CH, 1.2KV, 27A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.8V; Power RoHS Compliant: Yes
SICFET N-CH 1200V 27A TO247-3
| Littelfuse, Inc. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | LSIC1MO120E0120 | 60AC3729 | LSIC1MO120E0120 |
| Product Name | Enhancement Mode | Mosfet, N-Ch, 1.2Kv, 27A, To-247; Transistor Polarity Littelfuse | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||
| V(BR)DSS | 1200 volts | ||
| IDSS | 27000 milliamps | 27000 milliamps | |
| TJ | 175 C (347 F) |
