Littelfuse, Inc. 75V - 600V N-Channel Linear Power MOSFETs with Extended FBSOAs IXTH110N10L2

Description
Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C. Designed for linear operation Guaranteed FBSOA at 75°C Low on-resistances RDS(on) Avalanche rated International standard packages UL 94 V-0 Flammability qualified (molding epoxies)
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Description
Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C. Designed for linear operation Guaranteed FBSOA at 75°C Low on-resistances RDS(on) Avalanche rated International standard packages UL 94 V-0 Flammability qualified (molding epoxies)
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Datasheet
Datasheet Summary
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The IXTH110N10L2 is an N-channel enhancement mode MOSFET designed for linear operation with extended forward bias safe operating area (FBSOA). It is packaged in a TO-247 case, measuring 21.46 mm in length and 5.72 mm in pitch, with a drain tab. The device has a drain-source breakdown voltage of 100 V, continuous drain current of 110 A, and on-resistance of 18 mΩ at 10 V gate voltage and 25°C. It is avalanche rated, features an integrated gate resistor for easy paralleling, and guarantees FBSOA at 75°C. Thermal resistance from junction to case is 0.21 °C/W. The part meets UL 94 V-0 flammability requirements for its molding epoxies.

Datasheet Summary
Powered by GS/AI

The IXTH110N10L2 is an N-channel enhancement mode MOSFET designed for linear operation with extended forward bias safe operating area (FBSOA). It is packaged in a TO-247 case, measuring 21.46 mm in length and 5.72 mm in pitch, with a drain tab. The device has a drain-source breakdown voltage of 100 V, continuous drain current of 110 A, and on-resistance of 18 mΩ at 10 V gate voltage and 25°C. It is avalanche rated, features an integrated gate resistor for easy paralleling, and guarantees FBSOA at 75°C. Thermal resistance from junction to case is 0.21 °C/W. The part meets UL 94 V-0 flammability requirements for its molding epoxies.

Suppliers

Company
Product
Description
Supplier Links
75V - 600V N-Channel Linear Power MOSFETs with Extended FBSOAs - IXTH110N10L2 - Littelfuse, Inc.
Rosemont, IL, United States
75V - 600V N-Channel Linear Power MOSFETs with Extended FBSOAs
IXTH110N10L2
75V - 600V N-Channel Linear Power MOSFETs with Extended FBSOAs IXTH110N10L2
Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C. Designed for linear operation Guaranteed FBSOA at 75°C Low on-resistances RDS(on) Avalanche rated International standard packages UL 94 V-0 Flammability qualified (molding epoxies)

Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C. Designed for linear operation Guaranteed FBSOA at 75°C Low on-resistances RDS(on) Avalanche rated International standard packages UL 94 V-0 Flammability qualified (molding epoxies)

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXTH110N10L2
MOSFET Transistor 278-IXTH110N10L2
Power Field-Effect Transistor, Product overview: IXTH110N10L2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH110N10L2 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXTH110N10L2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH110N10L2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 100V, 110A, To-247; Channel Type Littelfuse - 03AH1457 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 110A, To-247; Channel Type Littelfuse
03AH1457
Mosfet, N-Ch, 100V, 110A, To-247; Channel Type Littelfuse 03AH1457
MOSFET, N-CH, 100V, 110A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 100V, 110A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTH110N10L2 278-IXTH110N10L2 03AH1457
Product Name 75V - 600V N-Channel Linear Power MOSFETs with Extended FBSOAs MOSFET Transistor Mosfet, N-Ch, 100V, 110A, To-247; Channel Type Littelfuse
Polarity N-Channel
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