The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
MOSFET 600V 90A Polar3 HiPerFET SOT227B
MOSFET 600V 90A Polar3 HiPerFET SOT227B
N-Channel MOSFET, 600V, 110A, High Speed Product overview: IXFN110N60P3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 110A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 110A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN110N60P3 can be used for catalog matching and distributor lookup.
MOSFET MOD, N-CH, 600V, 90A, 1.5KW; Channel Type:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:600V; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:1.5kW RoHS Compliant: Yes
| Littelfuse, Inc. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN110N60P3 | 8047596 | 278-IXFN110N60P3 | 03AH0712 |
| Product Name | 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | MOSFETs | N-Channel 600V 110A MOSFET Transistor | Mosfet Mod, N-Ch, 600V, 90A, 1.5Kw; Channel Type Littelfuse |
| Polarity | N-Channel | N-Channel | ||
| Package Type | SOT-227 | Sot-227b | TO-3 | |
| MOSFET Operating Mode | Enhancement |
