The IXFN360N10T is an N-channel enhancement mode power MOSFET for high-current switching applications. Packaged in a miniBLOC (SOT-227) case, it has a continuous drain current rating of 360 A at 25°C and a maximum drain-source voltage of 100 V. Its on-state resistance is 2.6 mΩ at 10 V gate drive and 100 A drain current. It features an avalanche energy rating of 3 J, a repetitive avalanche current of 1440 A, and an intrinsic body diode with a forward voltage of 1.2 V at 100 A. Operating junction temperature ranges from -55°C to 175°C. Thermal resistance from junction to case is 0.18 °C/W and from case to sink is 0.05 °C/W. The device is avalanche rated and has a gate-source voltage limit of ±20 V continuous.
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
| Littelfuse, Inc. | RS Components, Ltd. | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN360N10T | 1258041 |
| Product Name | 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options | MOSFETs |
| Polarity | N-Channel | N-Channel |
