Littelfuse, Inc. 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXFN360N10T

Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFN360N10T - Littelfuse, Inc.
Rosemont, IL, United States
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options
IXFN360N10T
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXFN360N10T
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Supplier's Site Datasheet
MOSFETs - 1258041 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1258041
MOSFETs 1258041
MOSFET 360A 100V SOT227

MOSFET 360A 100V SOT227

Supplier's Site
MOSFETs - 1684577 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1684577
MOSFETs 1684577
MOSFET 360A 100V SOT227

MOSFET 360A 100V SOT227

Supplier's Site

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN360N10T 1258041
Product Name 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options MOSFETs
Polarity N-Channel N-Channel
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