Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK44N80P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFK44N80P is an N-channel enhancement mode MOSFET designed for high-power switching applications, featuring a drain-source voltage rating of 800 V, continuous drain current of 44 A at 25°C, and a maximum drain-source on-resistance of 190 mΩ. It is packaged in a TO-264 case with a weight of 10 g and is avalanche rated with a fast intrinsic diode. The device supports a maximum junction temperature of 150°C and has a thermal resistance from junction to case of 0.12 °C/W. It meets RoHS standards and is designed for low package inductance and high power density.

Datasheet Summary
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The IXFK44N80P is an N-channel enhancement mode MOSFET designed for high-power switching applications, featuring a drain-source voltage rating of 800 V, continuous drain current of 44 A at 25°C, and a maximum drain-source on-resistance of 190 mΩ. It is packaged in a TO-264 case with a weight of 10 g and is avalanche rated with a fast intrinsic diode. The device supports a maximum junction temperature of 150°C and has a thermal resistance from junction to case of 0.12 °C/W. It meets RoHS standards and is designed for low package inductance and high power density.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK44N80P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFK44N80P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK44N80P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 800V 44A MOSFET Transistor
278-IXFK44N80P
N-Channel 800V 44A MOSFET Transistor 278-IXFK44N80P
800V 44A N-Channel MOSFET, 0.19Ω, TO-264AA Product overview: IXFK44N80P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800V, 44A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 44A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK44N80P can be used for catalog matching and distributor lookup.

800V 44A N-Channel MOSFET, 0.19Ω, TO-264AA Product overview: IXFK44N80P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800V, 44A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 44A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK44N80P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N, To-264; Channel Type Ixys Semiconductor - 58M7611 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-264; Channel Type Ixys Semiconductor
58M7611
Mosfet, N, To-264; Channel Type Ixys Semiconductor 58M7611
MOSFET, N, TO-264; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:44A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:1.2kW RoHS Compliant: Yes

MOSFET, N, TO-264; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:44A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:1.2kW RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFK44N80P 278-IXFK44N80P 58M7611
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 800V 44A MOSFET Transistor Mosfet, N, To-264; Channel Type Ixys Semiconductor
Polarity N-Channel
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