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Littelfuse, Inc. 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXFK160N30T

Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Features: International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier Advantages: Easy to Mount Space Savings High power density Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications
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Suppliers

Company
Product
Description
Supplier Links
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFK160N30T - Littelfuse, Inc.
Chicago, IL, United States
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options
IXFK160N30T
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXFK160N30T
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Features: International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier Advantages: Easy to Mount Space Savings High power density Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Features: International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier Advantages: Easy to Mount Space Savings High power density Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications

Supplier's Site Datasheet
Mosfet, N-Ch, 300V, 160A, To-264; Channel Type Littelfuse - 03AH0639 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 300V, 160A, To-264; Channel Type Littelfuse
03AH0639
Mosfet, N-Ch, 300V, 160A, To-264; Channel Type Littelfuse 03AH0639
MOSFET, N-CH, 300V, 160A, TO-264; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:160A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, N-CH, 300V, 160A, TO-264; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:160A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFK160N30T 03AH0639
Product Name 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options Mosfet, N-Ch, 300V, 160A, To-264; Channel Type Littelfuse
Polarity N-Channel
V(BR)DSS 300 volts
IDSS 160000 milliamps 160000 milliamps
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