Littelfuse, Inc. 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXFK160N30T

Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Datasheet
Datasheet Summary
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The IXFK160N30T is an N-channel enhancement mode MOSFET designed for high-power switching applications such as DC-DC converters, motor drives, and uninterruptible power supplies. It is packaged in a TO-264 case, measuring 26.16 mm in length and 19.96 mm in width, with a weight of 10 grams. The device has a drain-source breakdown voltage of 300 V, a continuous drain current rating of 160 A at 25°C, and a maximum on-state resistance of 19 mΩ at 10 V gate-source voltage and 80 A drain current. It features an avalanche-rated capability with an energy rating of 5 J and a fast intrinsic diode with a reverse recovery time of 200 ns. The maximum junction temperature is 150°C, with a thermal resistance from junction to case of 0.09°C/W. The device is rated for a transient gate-source voltage of ±30 V and a continuous gate-source voltage of ±20 V.

Datasheet Summary
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The IXFK160N30T is an N-channel enhancement mode MOSFET designed for high-power switching applications such as DC-DC converters, motor drives, and uninterruptible power supplies. It is packaged in a TO-264 case, measuring 26.16 mm in length and 19.96 mm in width, with a weight of 10 grams. The device has a drain-source breakdown voltage of 300 V, a continuous drain current rating of 160 A at 25°C, and a maximum on-state resistance of 19 mΩ at 10 V gate-source voltage and 80 A drain current. It features an avalanche-rated capability with an energy rating of 5 J and a fast intrinsic diode with a reverse recovery time of 200 ns. The maximum junction temperature is 150°C, with a thermal resistance from junction to case of 0.09°C/W. The device is rated for a transient gate-source voltage of ±30 V and a continuous gate-source voltage of ±20 V.

Suppliers

Company
Product
Description
Supplier Links
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFK160N30T - Littelfuse, Inc.
Rosemont, IL, United States
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options
IXFK160N30T
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXFK160N30T
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXFK160N30T
MOSFET Transistor 278-IXFK160N30T
Power Field-Effect Transistor, Product overview: IXFK160N30T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK160N30T can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXFK160N30T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK160N30T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 300V, 160A, To-264; Channel Type Littelfuse - 03AH0639 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 300V, 160A, To-264; Channel Type Littelfuse
03AH0639
Mosfet, N-Ch, 300V, 160A, To-264; Channel Type Littelfuse 03AH0639
MOSFET, N-CH, 300V, 160A, TO-264; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:160A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, N-CH, 300V, 160A, TO-264; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:160A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFK160N30T 278-IXFK160N30T 03AH0639
Product Name 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options MOSFET Transistor Mosfet, N-Ch, 300V, 160A, To-264; Channel Type Littelfuse
Polarity N-Channel
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