The IXTP02N120P is a 1200 V N-channel enhancement mode power MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, motor drives, and laser drivers. It comes in a TO-220 package weighing 3.00 g and is avalanche rated with an energy rating of 40 mJ. The device has a maximum continuous drain current of 0.2 A at 25°C and a drain-source on-state resistance of 75 Ω at VGS = 10 V and ID = 0.1 A. It features a fast intrinsic rectifier, low gate charge, low package inductance, and operates with a junction temperature range of -55°C to 150°C. The gate-source voltage is rated at ±20 V continuous and ±30 V transient. Thermal resistance from junction to case is 3.8 °C/W.
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
Power Field-Effect Transistor, 0.2A I(D), 1200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Product overview: IXTP02N120P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 0.2A, 1200V, 0.075ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 0.2A, 1200V, 0.075ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP02N120P can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 1.2KV, 200MA, 33W; Channel Type:N Channel; Drain Source Voltage Vds:1.2kV; Continuous Drain Current Id:200mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTP02N120P | 278-IXTP02N120P | 03AH1607 |
| Product Name | 100V - 1200V N-Channel Standard Power MOSFETs | N-Channel 0.2A 1200V 0.075ohm MOSFET Transistor | Mosfet, N-Ch, 1.2Kv, 200Ma, 33W; Channel Type Littelfuse |
| Polarity | N-Channel |
