The IXTY08N100D2 is a normally-on, N-channel depletion mode MOSFET designed for applications requiring simplified gate control and low conduction losses, such as audio amplifiers, start-up circuits, and protection circuits. It is packaged in a TO-252 case with a weight of 0.35 g and has a drain-source breakdown voltage of 1000 V, a continuous drain current of 800 mA, and an on-state resistance of 21 Ω at 25°C. The device is rated for a junction temperature range of -55°C to 150°C and a maximum lead temperature of 260°C for 10 seconds during soldering. Molding epoxies meet UL 94 V-0 flammability classification, and mounting torque for TO-220 variants is 1.13 Nm (10 lb.in.).
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
Power Field-Effect Transistor, Product overview: IXTY08N100D2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTY08N100D2 can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 1KV, 0.8A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:800mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTY08N100D2 | 278-IXTY08N100D2 | 03AH1899 |
| Product Name | 100V - 1700V N-Channel Depletion Mode Power MOSFETs | MOSFET Transistor | Mosfet, N-Ch, 1Kv, 0.8A, To-252; Channel Type Littelfuse |
| Polarity | N-Channel |
