These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate 3rd generation CoolMOS™(1) power MOSFET Enhanced total power density Low thermal resistance
MOSFET, N, ISOPLUS247; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:25A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:250W RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXKR25N80C | 24M3048 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Super Junction - Series: C3-Class - IXKR25N80C | Mosfet, N, Isoplus247; Channel Type Ixys Semiconductor |
| Polarity | N-Channel |
