Littelfuse, Inc. Enhancement Mode IXSA40N120L2-7TR

Description
"Industrial grade, single switch SiC MOSFETs exhibiting good power cycling characteristics and very fast, low-losses switching behavior. These MOSFETs are recommended for use in high-speed industrial switch mode power supplies. 1200 V with low RDS(on) = 30 mΩ SiC MOSFET technology with -3/+15...+18 V gate drive Low input capacitance of Ciss = 3000 pF Maximum virtual junction temperature of Tvj = 175 ⁰C Ultra-fast intrinsic body diode with trr = 54.8 ns Kelvin source connection
  • Enhancement Mode - IXSA40N120L2-7TR - Littelfuse, Inc.
    Littelfuse, Inc.
Datasheet
Description
"Industrial grade, single switch SiC MOSFETs exhibiting good power cycling characteristics and very fast, low-losses switching behavior. These MOSFETs are recommended for use in high-speed industrial switch mode power supplies. 1200 V with low RDS(on) = 30 mΩ SiC MOSFET technology with -3/+15...+18 V gate drive Low input capacitance of Ciss = 3000 pF Maximum virtual junction temperature of Tvj = 175 ⁰C Ultra-fast intrinsic body diode with trr = 54.8 ns Kelvin source connection
Datasheet

Suppliers

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Product
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Enhancement Mode - IXSA40N120L2-7TR - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
Enhancement Mode
IXSA40N120L2-7TR
Enhancement Mode IXSA40N120L2-7TR
"Industrial grade, single switch SiC MOSFETs exhibiting good power cycling characteristics and very fast, low-losses switching behavior. These MOSFETs are recommended for use in high-speed industrial switch mode power supplies. 1200 V with low RDS(on) = 30 mΩ SiC MOSFET technology with -3/+15...+18 V gate drive Low input capacitance of Ciss = 3000 pF Maximum virtual junction temperature of Tvj = 175 ⁰C Ultra-fast intrinsic body diode with trr = 54.8 ns Kelvin source connection

"Industrial grade, single switch SiC MOSFETs exhibiting good power cycling characteristics and very fast, low-losses switching behavior. These MOSFETs are recommended for use in high-speed industrial switch mode power supplies. 1200 V with low RDS(on) = 30 mΩ SiC MOSFET technology with -3/+15...+18 V gate drive Low input capacitance of Ciss = 3000 pF Maximum virtual junction temperature of Tvj = 175 ⁰C Ultra-fast intrinsic body diode with trr = 54.8 ns Kelvin source connection

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXSA40N120L2-7TR
Product Name Enhancement Mode
MOSFET Operating Mode Enhancement
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