IXSA40N120L2-7TR is a 1200 V silicon carbide MOSFET in a TO-263-7L package with a Kelvin source contact, designed for high-speed switching in applications such as solar inverters, UPS, and EV charging infrastructure. The device has a drain-source on-state resistance of 80 mΩ at 25 °C and can handle a continuous drain current of 41 A at 25 °C. It supports a maximum virtual junction temperature of 175 °C and has a thermal resistance from junction to case of 0.6 K/W. The gate-drive voltage range is recommended from -5 V to +18 V, with an ultra-fast intrinsic body diode exhibiting a reverse recovery time of 42 ns. The package dimensions conform to JEDEC TO-263-7L standards and include a drain tab for heat dissipation. The part meets RoHS requirements and is MSL1 rated for moisture sensitivity.
"Industrial grade, single switch SiC MOSFETs exhibiting good power cycling characteristics and very fast, low-losses switching behavior. These MOSFETs are recommended for use in high-speed industrial switch mode power supplies. 1200 V with low RDS(on) = 30 mΩ SiC MOSFET technology with -3/+15...+18 V gate drive Low input capacitance of Ciss = 3000 pF Maximum virtual junction temperature of Tvj = 175 ⁰C Ultra-fast intrinsic body diode with trr = 54.8 ns Kelvin source connection
| Littelfuse, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXSA40N120L2-7TR |
| Product Name | Enhancement Mode |
| MOSFET Operating Mode | Enhancement |
