The IXFH36N60X3 is a 600 V N-channel enhancement mode power MOSFET in a TO-247 package, rated for a continuous drain current of 36 A at 25 °C and a maximum junction temperature of 150 °C. It features a maximum on-resistance of 90 mΩ at VGS = 10 V and ID = 18 A, an avalanche energy rating of 750 mJ, and a dv/dt capability of 50 V/ns. The device has a low gate charge of 29 nC and an intrinsic source-drain diode with a forward voltage of 1.4 V and reverse recovery charge of 1.6 μC. Thermal resistance from junction to case is 0.28 °C/W. It is avalanche rated, meets RoHS standards, and is suitable for switch-mode power supplies, DC-DC converters, PFC circuits, and motor drives.
The 600V X3-Class Ultra Junction MOSFET IXFH36N60X3 is available in 36A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg. They feature the lowest figures of merit (FOM) RDS(on)xQg and RDS(on)xRthJC. These benefits enable designers to achieve higher efficiency using simplified thermal design. This HiPerFET™ series of power MOSFETs feature body diodes which offer low reverse recovery charge (QRM) and short reverse recovery time (trr). Low static losses Well-suited for high frequency applications Simplified thermal design High ruggedness against overvoltage Low gate drive power demand
| Littelfuse, Inc. | RS Components, Ltd. | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFH36N60X3 | 2456998 |
| Product Name | 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options | MOSFETs |
| Polarity | N-Channel |
