Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH10N100P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
  • 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH10N100P - Littelfuse, Inc.
    Littelfuse, Inc.
  • Mosfet, N-Ch, 1Kv, 10A, To-247Ad Rohs Compliant Ixys Semiconductor - 71AH4539 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH10N100P - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH10N100P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH10N100P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 10A 1000V 1.4ohm MOSFET Transistor
278-IXFH10N100P
N-Channel 10A 1000V 1.4ohm MOSFET Transistor 278-IXFH10N100P
Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Product overview: IXFH10N100P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 10A, 1000V, 1.4ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10A, 1000V, 1.4ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH10N100P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Product overview: IXFH10N100P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 10A, 1000V, 1.4ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10A, 1000V, 1.4ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH10N100P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 1Kv, 10A, To-247Ad Rohs Compliant Ixys Semiconductor - 71AH4539 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1Kv, 10A, To-247Ad Rohs Compliant Ixys Semiconductor
71AH4539
Mosfet, N-Ch, 1Kv, 10A, To-247Ad Rohs Compliant Ixys Semiconductor 71AH4539
MOSFET, N-CH, 1KV, 10A, TO-247AD ROHS COMPLIANT: YES

MOSFET, N-CH, 1KV, 10A, TO-247AD ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH10N100P 278-IXFH10N100P 71AH4539
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 10A 1000V 1.4ohm MOSFET Transistor Mosfet, N-Ch, 1Kv, 10A, To-247Ad Rohs Compliant Ixys Semiconductor
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors - FETs, MOSFETs - RF - 6LN04CH-TL-E - 856987-6LN04CH-TL-E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 6LN04CH-TL-E
6LN04CH-TL-E
Specs
Package Type SOT3
View Details
Standard level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) - BUK7Q6R0-40HJ - Nexperia B.V.
Nexperia B.V.
Standard level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D)
BUK7Q6R0-40HJ
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
IDSS 73000 milliamps
View Details
2 suppliers
MOSFETs - 1826901 - RS Components, Ltd.
RS Components, Ltd.
MOSFETs
1826901
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
Package Type X1-dfn1006
View Details
PRECISION P-CHANNEL EPAD® MOSFET ARRAY QUAD NANOPOWER™ MATCHED PAIR - ALD310702SCL - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
PRECISION P-CHANNEL EPAD® MOSFET ARRAY QUAD NANOPOWER™ MATCHED PAIR
ALD310702SCL
Specs
Polarity P-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS -8 volts
View Details
4 suppliers