The IXFH10N100P is an N-channel enhancement mode power MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, motor drives, and laser drivers. It is packaged in a TO-247 AD case with dimensions of 21.46 mm by 16.26 mm and weighs 6 grams. The device features a drain-source breakdown voltage of 1000 V, continuous drain current of 10 A at 25°C, and a maximum drain-source on-resistance of 1.4 Ω at 10 V gate-source voltage. It is avalanche rated with an energy rating of 500 mJ and incorporates a fast intrinsic rectifier with a reverse recovery time of 300 ns. The MOSFET meets RoHS standards and has a maximum operating junction temperature of 150°C. Thermal resistance junction-to-case is 0.33 °C/W. The device supports transient gate-source voltage of ±40 V and dynamic dv/dt rating of 15 V/ns. Mounting torque is specified at 1.13 Nm (10 lb.in.).
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Product overview: IXFH10N100P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 10A, 1000V, 1.4ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10A, 1000V, 1.4ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH10N100P can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 1KV, 10A, TO-247AD ROHS COMPLIANT: YES
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFH10N100P | 278-IXFH10N100P | 71AH4539 |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | N-Channel 10A 1000V 1.4ohm MOSFET Transistor | Mosfet, N-Ch, 1Kv, 10A, To-247Ad Rohs Compliant Ixys Semiconductor |
| Polarity | N-Channel |
