Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN210N20P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFN210N20P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFN210N20P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN210N20P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore
200V 188A 0.0105 Ohm MOSFET Transistor
278-IXFN210N20P
200V 188A 0.0105 Ohm MOSFET Transistor 278-IXFN210N20P
N-Ch MOSFET, 200V, 188A, 0.0105 Ohm, 4-Pin Product overview: IXFN210N20P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 188A, 0.0105 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 188A, 0.0105 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN210N20P can be used for catalog matching and distributor lookup.

N-Ch MOSFET, 200V, 188A, 0.0105 Ohm, 4-Pin Product overview: IXFN210N20P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 188A, 0.0105 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 188A, 0.0105 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN210N20P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet Mod, N-Ch, 200V, 188A, 1.07Kw; Channel Type Littelfuse - 03AH0729 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Mod, N-Ch, 200V, 188A, 1.07Kw; Channel Type Littelfuse
03AH0729
Mosfet Mod, N-Ch, 200V, 188A, 1.07Kw; Channel Type Littelfuse 03AH0729
MOSFET MOD, N-CH, 200V, 188A, 1.07KW; Channel Type:N Channel; Continuous Drain Current Id:188A; Drain Source Voltage Vds:200V; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Power Dissipation:1.07kW RoHS Compliant: Yes

MOSFET MOD, N-CH, 200V, 188A, 1.07KW; Channel Type:N Channel; Continuous Drain Current Id:188A; Drain Source Voltage Vds:200V; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Power Dissipation:1.07kW RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN210N20P 278-IXFN210N20P 03AH0729
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) 200V 188A 0.0105 Ohm MOSFET Transistor Mosfet Mod, N-Ch, 200V, 188A, 1.07Kw; Channel Type Littelfuse
Polarity N-Channel
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