The IXFN44N80P is an N-channel enhancement mode Power MOSFET with a fast intrinsic rectifier, designed for high-power switching applications. Packaged in a miniBLOC case weighing 30 g, it has an 800 V drain-source voltage rating and a continuous drain current of 39 A at 25°C. Its on-resistance is 190 mΩ at 22 A and 10 V gate-source voltage, with a reverse recovery time of 250 ns. The junction-to-case thermal resistance is 0.18 °C/W, and the device supports a dv/dt rating of 10 V/ns. It operates from -55 °C to 150 °C junction temperature and has an isolation voltage of 2500 V~ for one minute. The part complies with RoHS and is qualified to AEC-Q200.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
MOSFET, N, SOT-227B; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:44A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:694W; MSL:- RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN44N80P | 58M7622 |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | Mosfet, N, Sot-227B; Channel Type Ixys Semiconductor |
| Polarity | N-Channel |
