Littelfuse, Inc. 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN32N120

Description
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
  • 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFN32N120 - Littelfuse, Inc.
    Littelfuse, Inc.
  • Mosfet, N-Ch, 1.2Kv, 32A, 150Deg C, 780W; Channel Type Ixys Semiconductor - 38K3182 - Newark, An Avnet Company
    Newark, An Avnet Company
Datasheet
Description
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
Datasheet

Suppliers

Company
Product
Description
Supplier Links
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFN32N120 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFN32N120
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN32N120
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode

The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode

Supplier's Site Datasheet
Mosfet, N-Ch, 1.2Kv, 32A, 150Deg C, 780W; Channel Type Ixys Semiconductor - 38K3182 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.2Kv, 32A, 150Deg C, 780W; Channel Type Ixys Semiconductor
38K3182
Mosfet, N-Ch, 1.2Kv, 32A, 150Deg C, 780W; Channel Type Ixys Semiconductor 38K3182
MOSFET, N-CH, 1.2KV, 32A, 150DEG C, 780W; Channel Type:N Channel; Drain Source Voltage Vds:1.2kV; Continuous Drain Current Id:32A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, N-CH, 1.2KV, 32A, 150DEG C, 780W; Channel Type:N Channel; Drain Source Voltage Vds:1.2kV; Continuous Drain Current Id:32A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN32N120 38K3182
Product Name 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) Mosfet, N-Ch, 1.2Kv, 32A, 150Deg C, 780W; Channel Type Ixys Semiconductor
Polarity N-Channel
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