The IXFN32N120 is an N-channel enhancement mode Power MOSFET designed for high-voltage switching applications such as DC-DC converters, battery chargers, and switched-mode power supplies. It is packaged in a miniBLOC (SOT-227B) case with dimensions of 31.50-31.88 mm in length, 7.80-8.20 mm in width, and 38.00-38.23 mm in height, weighing 30 g. The device has a drain-source breakdown voltage of 1200 V, a continuous drain current of 32 A at 25°C, and an on-resistance of 0.35 Ω at 10 V gate voltage. It features an avalanche energy rating of 64 mJ at 25°C, a thermal resistance junction-to-case of 0.16 K/W, and an isolated aluminum nitride base with 2500 V~ RMS dielectric strength. The part is rated for junction temperatures from -55°C to 150°C and meets international standard package requirements with low package inductance and an integrated fast intrinsic rectifier.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
MOSFET, N-CH, 1.2KV, 32A, 150DEG C, 780W; Channel Type:N Channel; Drain Source Voltage Vds:1.2kV; Continuous Drain Current Id:32A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN32N120 | 38K3182 |
| Product Name | 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | Mosfet, N-Ch, 1.2Kv, 32A, 150Deg C, 780W; Channel Type Ixys Semiconductor |
| Polarity | N-Channel |
