The IXFH24N90P is an N-channel enhancement mode MOSFET designed for switched-mode and resonant-mode power supplies, DC-DC converters, laser drivers, and motor drives. It is packaged in a TO-247 case, measuring 20.80 to 21.46 mm in length and 5.20 to 5.72 mm in width. The device has a drain-source voltage rating of 900 V, a continuous drain current of 24 A at 25°C, and a maximum on-state resistance of 420 mΩ at 10 V gate-source voltage. It features an avalanche rated structure with a single-pulse avalanche energy of 1 J, a fast intrinsic diode with a reverse recovery time of 300 ns, and a maximum junction temperature of 150°C. The thermal resistance from junction to case is 0.19 °C/W. Package lead temperature during soldering is rated up to 260°C for 10 seconds.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
Power Field-Effect Transistor, 24A I(D), 900V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Product overview: IXFH24N90P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 24A, 900V, 0.42ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 24A, 900V, 0.42ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH24N90P can be used for catalog matching and distributor lookup.
N CHANNEL POLAR POWER MOSFET, HiPerFET, 900V, 24A, TO247; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:24A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:660W RoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET |
| Product Number | IXFH24N90P | 278-IXFH24N90P | 83R9969 |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | N-Channel 24A 900V 0.42ohm MOSFET Transistor | N Channel Polar Power Mosfet, Hiperfet, 900V, 24A, To247; Channel Type Ixys Semiconductor |
| Polarity | N-Channel | N-Channel |
