The IXTH200N10T is an N-channel enhancement mode MOSFET designed for high current switching applications such as motor drives, automotive ABS systems, and DC/DC converters. It is packaged in a TO-247 case, measuring 20.80 to 21.46 mm in length and 15.75 to 16.26 mm in width, with a weight of 6.0 g. The device has a drain-source breakdown voltage of 100 V, a continuous drain current of 200 A at 25°C, and a maximum RDS(on) of 5.5 mΩ at 10 V gate voltage and 50 A drain current. It is avalanche rated, operates with a junction temperature range of -55°C to 175°C, and has a thermal resistance from junction to case of 0.27°C/W. The part meets international standard package requirements and is rated for 175°C operation. It is qualified for automotive applications and is compatible with the TO-247 mounting standard.
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
MOSFET, N-CH, 100V, 200A, 175DEG C, 550W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:200A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTH200N10T | 03AH1485 |
| Product Name | 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options | Mosfet, N-Ch, 100V, 200A, 175Deg C, 550W; Channel Type Littelfuse |
| Polarity | N-Channel |
